 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 600V 29A 0.210 APT6021BLL APT6021SLL BLL D3PAK TO-247 POWER MOS 7 (R) R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 SLL * Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package D G S All Ratings: TC = 25C unless otherwise specified. APT6021BLL_SLL UNIT Volts Amps 600 29 116 30 40 400 3.20 -55 to 150 300 29 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 600 0.210 100 500 100 3 5 (VGS = 10V, ID = 14.5A) Ohms A nA Volts 9-2004 050-7067 Rev C Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT6021BLL_SLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 29A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 29A @ 25C RG = 1.6 6 INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 29A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 400V VGS = 15V ID = 29A, RG = 5 MIN TYP MAX UNIT 3470 635 48 80 20 44 10 7 25 4 325 205 500 250 MIN TYP MAX UNIT Amps Volts ns C nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy ns J SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 29 116 1.3 664 9.29 8 MIN TYP MAX (Body Diode) (VGS = 0V, IS = -29A) Reverse Recovery Time (IS = -29A, dl S/dt = 100A/s) Reverse Recovery Charge (IS = -29A, dl S /dt = 100A/s) Peak Diode Recovery dv/ dt 5 V/ns THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W 0.31 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25C, L = 3.09mH, RG = 25, Peak IL = 29A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID29A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 , THERMAL IMPEDANCE (C/W) 0.30 0.25 0.9 0.7 0.20 0.15 0.10 0.05 0 0.5 Note: PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2 9-2004 0.3 050-7067 Rev C Z JC 0.1 0.05 10-5 SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 80 VGS =15 &10V 60 8V 7.5V 7V 20 6.5V 6V APT6021BLL_SLL RC MODEL Junction temp. (C) 0.131 Power (watts) 0.180 Case temperature. (C) 0.161F 0.00789F ID, DRAIN CURRENT (AMPERES) 40 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100 90 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.2 V GS 0 5.5V NORMALIZED TO = 10V @ 14.5A 80 70 60 50 40 30 20 10 0 TJ = +125C TJ = +25C TJ = -55C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 1.15 1.10 1.05 1.00 0.95 0.90 VGS=20V VGS=10V 0 30 25 20 15 10 5 0 25 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 1.15 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT ID, DRAIN CURRENT (AMPERES) 1.10 1.05 1.00 0.95 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 I D 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 = 14.5A = 10V V 2.0 1.5 1.0 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) GS 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7067 Rev C 9-2004 Typical Performance Curves 116 ID, DRAIN CURRENT (AMPERES) 10,000 APT6021BLL_SLL Ciss 50 OPERATION HERE LIMITED BY RDS (ON) C, CAPACITANCE (pF) 1,000 Coss 100S 10 100 Crss 1 TC =+25C TJ =+150C SINGLE PULSE 1mS 10mS 1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I D 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 16 = 29A 200 100 12 VDS=120V 8 VDS=300V VDS=480V 4 TJ =+150C TJ =+25C 10 20 40 60 80 100 120 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 70 60 0 0 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 60 50 V DD G = 400V R = 5 T = 125C J td(on) and td(off) (ns) 50 40 30 20 10 0 td(off) V DD G L = 100H = 400V 40 tr and tf (ns) R = 5 tf T = 125C J L = 100H 30 tr 20 td(on) 10 0 0 30 40 50 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD G 10 20 30 40 50 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1400 V = 400V 0 10 20 1000 = 400V R = 5 DD L = 100H E ON includes diode reverse recovery. Eon SWITCHING ENERGY (J) SWITCHING ENERGY (J) 800 T = 125C J 1200 1000 800 I D J = 29A T = 125C L = 100H E ON includes diode reverse recovery. Eoff 600 Eon 600 400 200 400 Eoff 9-2004 200 050-7067 Rev C 0 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 10 20 30 40 50 10 20 30 40 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 0 APT6021BLL_SLL Gate Voltage 10 % 90% T = 125 C J Gate Voltage td(on) tr 90% Drain Current td(off) 90% Drain Voltage T = 125 C J tf 5% 10 % Switching Energy 5% Drain Voltage 10% Drain Current 0 Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT15DF60 V DD ID V DS G D.U.T. Figure 20, Inductive Switching Test Circuit TO-247 Package Outline Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 1.04 (.041) 1.15 (.045) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) Revised 4/18/95 13.79 (.543) 13.99 (.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 20.32 (.800) Gate Drain Source 5.45 (.215) BSC {2 Plcs.} Heat Sink (Drain) and Leads are Plated 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate Dimensions in Millimeters (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7067 Rev C 9-2004 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) |
Price & Availability of APT6021SLL
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |